中大機構典藏-NCU Institutional Repository-提供博碩士論文、考古題、期刊論文、研究計畫等下載:Item 987654321/29423
English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 78728/78728 (100%)
造访人次 : 33348060      在线人数 : 530
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜寻范围 查询小技巧:
  • 您可在西文检索词汇前后加上"双引号",以获取较精准的检索结果
  • 若欲以作者姓名搜寻,建议至进阶搜寻限定作者字段,可获得较完整数据
  • 进阶搜寻


    jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/29423


    题名: MOLECULAR-BEAM EPITAXIAL-GROWTH OF INXAL1-XAS ON GAAS
    作者: CHYI,JI;SHIEH,JL;LIN,RM;NEE,TE;PAN,JW
    贡献者: 電機工程研究所
    关键词: CRITICAL LAYER THICKNESS;MISFIT DISLOCATIONS;STRAIN;INXGA1-XAS;HETEROSTRUCTURES;MECHANISMS
    日期: 1994
    上传时间: 2010-06-29 20:24:25 (UTC+8)
    出版者: 中央大學
    摘要: The surface reconstruction of InAlAs on GaAs between 490 and 700-degrees-C has been investigated during molecular-beam epitaxial growth. It is found that the surface reconstruction of InAlAs is similar to that of AlGaAs alloy. The (2x1) and (1x1) surfaces occur at a substrate temperature between 490 and 650-degrees-C, while at a temperature above 650-degrees-C, the ordered As-stabilized (3x2 surface appeared during the steady-state growth. InAlAs/GaAs heteroepitaxial layers have been analyzed and reveal that the residual strain in the epilayers is strongly dependent on the composition as well as the thickness of the epilayer. These characteristics are consistent with the InGaAs/GaAs system.
    關聯: APPLIED PHYSICS LETTERS
    显示于类别:[電機工程研究所] 期刊論文

    文件中的档案:

    档案 描述 大小格式浏览次数
    index.html0KbHTML678检视/开启


    在NCUIR中所有的数据项都受到原著作权保护.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 隱私權政策聲明