HYDROGENATED AMORPHOUS-SILICON CARBIDE DOUBLE GRADED-GAP P-I-N THIN-FILM LIGHT-EMITTING-DIODES

NCUIR > College of Electrical Engineering & Computer Science > Graduate Institute of Electrical Engineering > journal & Dissertation > Item 987654321/29450

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/29450

Title:	HYDROGENATED AMORPHOUS-SILICON CARBIDE DOUBLE GRADED-GAP P-I-N THIN-FILM LIGHT-EMITTING-DIODES
Authors:	SHIN,NF;CHEN,JY;JEN,TS;HONG,JW;CHANG,CY
Contributors:	電機工程研究所
Date:	1993
Issue Date:	2010-06-29 20:25:03 (UTC+8)
Publisher:	中央大學
Abstract:	Hydrogenated amorphous silicon carbide (a-SiC:H) p-i-n thin-film light-emitting diodes (TFLED's) with graded p+-i and i-n+ junctions have been proposed and fabricated successfully on an indium-tin-oxide (ITO)-coated glass. An obtained orange TFLED reveals a brightness of 207 cd/m2 at an injection current density of 600 mA/cm2, which is the brightest one ever reported for a-SiC:H TFLED's at the same injection current density. This significant increase of brightness could be ascribed to the combined effect of reduced interface states by using the graded-gap junctions, lower contact resistance due to post-metallization annealing, and higher optical gaps of the doped layers.
Relation:	IEEE ELECTRON DEVICE LETTERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	609	View/Open

社群 sharing