中大機構典藏-NCU Institutional Repository-提供博碩士論文、考古題、期刊論文、研究計畫等下載:Item 987654321/29718
English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 78345/78345 (100%)
造访人次 : 32662724      在线人数 : 445
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜寻范围 查询小技巧:
  • 您可在西文检索词汇前后加上"双引号",以获取较精准的检索结果
  • 若欲以作者姓名搜寻,建议至进阶搜寻限定作者字段,可获得较完整数据
  • 进阶搜寻


    jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/29718


    题名: Optical and structural properties of Mg-ion implanted GaN nanowires
    作者: Huang,PJ;Chen,CW;Chen,JY;Chi,GC;Pan,CJ;Kuo,CC;Chen,LC;Hsu,CW;Chen,KH;Hung,SC;Chang,CY;Pearton,SJ;Ren,F
    贡献者: 光電科學研究中心
    关键词: GALLIUM NITRIDE NANOWIRES;RAMAN-SCATTERING;LUMINESCENCE BAND;PHOTOLUMINESCENCE;TEMPERATURE;NANORODS;DISORDER;DEFECTS;GROWTH
    日期: 2009
    上传时间: 2010-06-30 15:39:27 (UTC+8)
    出版者: 中央大學
    摘要: Mg+ ions (60 keV) were implanted into GaN nanowires (NWs) with total fluxes of 5 x 10(12)-5 x 10(14) cm(-2) followed by thermal annealing at 700 degrees C in NZ ambient. Transmission electron microscopic images showed amorphous layer formation and defect accumulation in the higher dose Mg-implanted GaN NWs after annealing. Photoluminescence spectra (300 K) of the annealed Mg-implanted GaN NWs exhibited near-band-edge (NBE) emission, donor-acceptor pair (DAP) emission, and defect-related yellow luminescence. With increasing dose, the NBE and DAP emissions are red shifted. Similar phenomena were observed in samples implanted with At to produce similar amounts of lattice disorder. The NWs show a much higher sensitivity to defect accumulation than GaN thin films. (C) 2008 Elsevier Ltd. All rights reserved.
    關聯: VACUUM
    显示于类别:[光電科學研究中心] 期刊論文

    文件中的档案:

    档案 描述 大小格式浏览次数
    index.html0KbHTML1245检视/开启


    在NCUIR中所有的数据项都受到原著作权保护.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 隱私權政策聲明