Optical investigation of nitrogen ion implanted bulk ZnO

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題名:	Optical investigation of nitrogen ion implanted bulk ZnO
作者:	Pall,CJ;Chen,JY;Chi,GC;Chou,BW;Pong,BJ;Ren,F;Chang,CY;Pearton,SJ
貢獻者:	光電科學研究中心
關鍵詞:	MOLECULAR-BEAM EPITAXY;P-TYPE ZNO;CHEMICAL-VAPOR-DEPOSITION;THIN-FILMS;DOPED ZNO;VIBRATIONAL-MODES;PHOTOLUMINESCENCE;AL
日期:	2009
上傳時間:	2010-06-30 15:39:29 (UTC+8)
出版者:	中央大學
摘要:	Nitrogen ions were implanted into melt-grown ZnO (0001) Substrates and subsequently annealed at 800 degrees C Under all oxygen ambient. The photoluminescence spectrum of N+-implanted ZnO excited by a He-Cd laser exhibited donor-acceptor pair (DAP) transition emission at 385 nm with a full width at half maximum of 30 nm at 10 K. The DAP emission is associated with the acceptor energy of nitrogen in ZnO, calculated to be 170 meV. Defect-related red emission at about 610 nm observed in N+-implanted ZnO was due to the residual damage from the implantation step because it was also observed in Ar+-implanted ZnO but not in un-implanted ZnO annealed at 800 degrees C under the same oxygen ambient. (C) 2009 Elsevier Ltd. All rights reserved.
關聯:	VACUUM
顯示於類別:	[光電科學研究中心] 期刊論文

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