Depth profiles and concentration percentages of SiO2 and SiOx induced by ion bombardment of a silicon (100) target

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Title:	Depth profiles and concentration percentages of SiO2 and SiOx induced by ion bombardment of a silicon (100) target
Authors:	Lee,Chin Shuang;Chen,Chia Chan;Hsu,Chin Shun;Lee,Shyong;Hsu,Ron-Kai
Contributors:	材料科學與工程研究所
Keywords:	THERMAL-OXIDATION;BEAM OXIDATION;LIGHT-EMISSION;SI(100);OXYGEN
Date:	2008
Issue Date:	2010-07-06 15:57:33 (UTC+8)
Publisher:	中央大學
Abstract:	Very thin-film of silicone oxide is of importance in many microelectronics device fabrication. A 9 keV Ar+ beam was applied to bombard a silicon (100) target ambient oxygen gas. The measurement was performed with a fixed time of bombardment but different
Relation:	JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Appears in Collections:	[Institute of Materials Science and Engineering] journal & Dissertation

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