Light enhancement by the formation of an Al oxide honeycomb nanostructure on the n-GaN surface of thin-GaN light-emitting diodes

NCUIR > Engineering College > Institute of Materials Science and Engineering > journal & Dissertation > Item 987654321/29820

Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/29820

Title:	Light enhancement by the formation of an Al oxide honeycomb nanostructure on the n-GaN surface of thin-GaN light-emitting diodes
Authors:	Lin,C. L.;Chen,P. H.;Chan,Chia-Hua;Lee,C. C.;Chen,Chii-Chang;Chang,Jeng-Yang;Liu,C. Y.
Contributors:	材料科學與工程研究所
Keywords:	P-GAN;EXTRACTION;OUTPUT
Date:	2007
Issue Date:	2010-07-06 15:58:45 (UTC+8)
Publisher:	中央大學
Abstract:	By using a micron polystyrene ball array as a template, an Al oxide honeycomb structure was produced on the n-GaN surface of a thin-GaN light-emitting diode (LED). The Al oxide honeycomb structure consists of the networking hexagonal Al oxide nanowall. Wi
Relation:	APPLIED PHYSICS LETTERS
Appears in Collections:	[Institute of Materials Science and Engineering] journal & Dissertation

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	648	View/Open

社群 sharing