Preparation of TiO2-doped ZnO films by radio frequency magnetron sputtering in ambient hydrogen-argon gas

NCUIR > Engineering College > Graduate Institute of Mechanical Engineering > journal & Dissertation > Item 987654321/30360

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Title:	Preparation of TiO2-doped ZnO films by radio frequency magnetron sputtering in ambient hydrogen-argon gas
Authors:	Chung,Jeng-Lin;Chen,Jyh-Chen;Tseng,Chung-Jen
Contributors:	機械工程研究所
Keywords:	OXIDE THIN-FILMS;ZINC-OXIDE;OPTICAL-PROPERTIES;AR+H-2 AMBIENT;TEMPERATURE;TRANSMITTANCE;TIME
Date:	2008
Issue Date:	2010-07-06 16:17:43 (UTC+8)
Publisher:	中央大學
Abstract:	Highly conductive, transparent TiO2-doped ZnO films are grown by radio frequency (RF) magnetron sputtering in ambient hydrogen-argon (Ar + H-2) gas at a temperature of 150 degrees C and the effects of the Ti and H-2 content on the structural, electrical,
Relation:	APPLIED SURFACE SCIENCE
Appears in Collections:	[Graduate Institute of Mechanical Engineering] journal & Dissertation

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