Nanoscale thick layer transfer of hydrogen-implanted wafer by using polycrystalline silicon sacrificial layer

NCUIR > Engineering College > Graduate Institute of Mechanical Engineering > journal & Dissertation > Item 987654321/30499

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/30499

Title:	Nanoscale thick layer transfer of hydrogen-implanted wafer by using polycrystalline silicon sacrificial layer
Authors:	Lee,T. -H.;Huang,C. -H.;Yang,Y. Y.;Suryasindhu,T.;Li,P. W.
Contributors:	機械工程研究所
Keywords:	ON-INSULATOR;TECHNOLOGY
Date:	2007
Issue Date:	2010-07-06 16:20:47 (UTC+8)
Publisher:	中央大學
Abstract:	This article presents a sacrificial layer method of forming a nanoscale thick silicon-on-insulator thin film, avoiding the channeling effect of implantation and eliminating a subsequent thinning process. However, because of the light mass of hydrogen, it
Relation:	APPLIED PHYSICS LETTERS
Appears in Collections:	[Graduate Institute of Mechanical Engineering] journal & Dissertation

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