本論文應用Metal-RTA (金屬快速熱退火)製程使 (Bottom) p-Si/Silicon dioxide/Poly-Si/Ni/Metal lead (Top)多層催化劑系統，催化金屬鎳(3, 7 nm Ni)薄膜與不同厚度多晶矽(10 nm、25 nm、35 nm Poly-Si)薄膜反應形成不同相的矽化鎳(NiSix)，接著使用Thermal CVD (熱化學氣相沉積法)成長奈米碳管，研究不同相的矽化鎳與其催化成長出之奈米碳管性質的關聯性，並與以鎳為催化劑所成長之奈米碳管作為對照組比較。進一步製作奈米碳管二極、三極元件。 因為成長的過程中相變持續變化的關係，矽化鎳的相與奈米碳管的關係並沒有被觀察到。使用鎳所成長出來的奈米碳管直徑比以使用矽化鎳所成長出來的奈米碳管直徑來的大。由製備出來的奈米碳管元件，量測其電性，可知道本實驗所成長出來的奈米碳管皆為金屬性奈米碳管。 In this thesis, the rapid thermal annealing (RTA) process was applied on (Bottom) p-Si/Silicon dioxide/Poly-Si/Ni/Metal lead (Top) for the reaction of nickel catalytic film (7 nm) with poly-silicon films (10 nm、25 nm、35 nm) to form nickel silicide (NiSix) of different phases. Thermal chemical vapor deposition (CVD) method was followed to grow carbon nanotubes (CNTs) by Ni catalyst from Ni or nickel silicide film. We study the correlation between NiSix phase and CNT property and compare with CNTs from Ni catalyst. Growth of self-aligned carbon nanotubes was used to fabricate lateral CNT diode and triode devices. Due to the phase change of NiSix during CNT growth, no apparent correlation between NiSix phase and CNT property was found. The diameters of CNTs grown from Ni catalyst are larger than those of CNTs grown from NiSix catalyst. Linear I-V characteristics indicated the metallic property of the bridged CNTs.
