| 題名: | Optoelectronic characteristics of direct-current and alternating-current white thin-film light-emitting diodes based on hydrogenated amorphous silicon nitride film |
| 作者: | Yeh,Rong-Hwei;Yu,Tai-Rong;Chung,Te-Cheng;Lo,Shih-Yung;Hong,Jyh-Wong |
| 貢獻者: | 電機工程研究所 |
| 關鍵詞: | VISIBLE ELECTROLUMINESCENCE;FREQUENCY-RESPONSE;LAYER |
| 日期: | 2008 |
| 上傳時間: | 2010-07-06 18:13:43 (UTC+8) |
| 出版者: | 中央大學 |
| 摘要: | Direct-current and alternating-current white thin-film light-emitting diodes (DCW and ACW TFLEDs) have been fabricated and demonstrated with the intrinsic hydrogenated amorphous silicon nitride (i-a-SiN:H) film as the luminescent layer. The achievable bri |
| 關聯: | IEEE TRANSACTIONS ON ELECTRON DEVICES???? |
| 顯示於類別: | [電機工程研究所] 期刊論文
|
