| 題名: | Study of drain alloy for antimony substrate vertical high voltage power metal oxide semiconductor field effect transistors |
| 作者: | Liao,Chien-Nan;Chien,Feng-Tso;Chen,Chii-Wen;Tsai,Yao-Tsung |
| 貢獻者: | 電機工程研究所 |
| 關鍵詞: | CONCENTRATION LIMITATION;SILICON-CRYSTALS |
| 日期: | 2008 |
| 上傳時間: | 2010-07-06 18:14:13 (UTC+8) |
| 出版者: | 中央大學 |
| 摘要: | An antimony (Sb)-doped substrate is used to fabricate high voltage power metal oxide semiconductor field effect transistor (MOSFET) to prevent out-doping phenomenon. Since the contact resistance of Sb-doped substrate is higher than that of the phosphor-us |
| 關聯: | JAPANESE JOURNAL OF APPLIED PHYSICS |
| 顯示於類別: | [電機工程研究所] 期刊論文
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