Transverse-junction superluminescent diodes at the 1.1 mu m wavelength regime

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Title:	Transverse-junction superluminescent diodes at the 1.1 mu m wavelength regime
Authors:	Guol,Shi-Hao;Wang,Jr-Hung;Wu,Yu-Huei;Lin,Wei;Yang,Ying-Jay;Sun,Chi-Kuang;Shi,Jin-Wei
Contributors:	電機工程研究所
Keywords:	OPTICAL COHERENCE TOMOGRAPHY;LIGHT-EMITTING-DIODES;EMISSION;INJECTION;LASERS;GAIN
Date:	2008
Issue Date:	2010-07-06 18:14:29 (UTC+8)
Publisher:	中央大學
Abstract:	We demonstrate, for the first time to our knowledge, GaAs-based transverse-junction (TJ) superluminescent diodes (SLDs) that operate at a wavelength of 1.1 mu m. Due to lateral current injection by use of TJ, specified as transverse carrier flow spread in
Relation:	OPTICS EXPRESS????
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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