A W-band injection-locked frequency divider using GaAs pHEMTs and cascode circuit topology

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/31978

Title:	A W-band injection-locked frequency divider using GaAs pHEMTs and cascode circuit topology
Authors:	Huang,Fan-Hsiu;Lin,Cheng-Kuo;Wu,Yen-Shiang;Wang,Yu-Chi;Chan,Yi-Jen
Contributors:	電機工程研究所
Date:	2007
Issue Date:	2010-07-06 18:15:46 (UTC+8)
Publisher:	中央大學
Abstract:	This study presents a W-band injection-locked frequency divider (ILFD) with a wide locking range characteristic by using 0.15 mu m GaAs pHEMT techniques. Based on the cascode circuit topology, the oscillation and the injection parts can be designed indivi
Relation:	IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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