Geometry effect on SiGe heterojunction bipolar transistor unit cell for 1 W high-efficiency RF power amplifier applications

NCUIR > College of Electrical Engineering & Computer Science > Graduate Institute of Electrical Engineering > journal & Dissertation > Item 987654321/32043

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32043

Title:	Geometry effect on SiGe heterojunction bipolar transistor unit cell for 1 W high-efficiency RF power amplifier applications
Authors:	Chiou,Hwann-Kaeo;Yeh,Ping-Chun;Lee,Chwan-Ying;Yeh,John;Tang,Denny;Chern,John
Contributors:	電機工程研究所
Keywords:	THERMAL DESIGN;LOW-VOLTAGE;PERFORMANCE;HBTS;COMMUNICATION;TECHNOLOGY;SIGEBICMOS;BREAKDOWN;BICMOS
Date:	2007
Issue Date:	2010-07-06 18:17:18 (UTC+8)
Publisher:	中央大學
Abstract:	The effect of geometry on the RF power performance of silicon-germanium heterojunction bipolar transistor (SiGe HBT) unit cells is investigated using various emitter finger spacing (S). Two unit cells, namely, HBT-1 and HBT-2 with the same emitter area of
Relation:	JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Appears in Collections:	[電機工程研究所] 期刊論文

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