| 題名: | A collector-up heterojunction bipolar transistor using a p-type doping buried layer |
| 作者: | Hsu,Hung-tsao;Hsin,Yue-ming |
| 貢獻者: | 電機工程研究所 |
| 關鍵詞: | ION IMPLANTATION;SUBCOLLECTOR;HBTS;FABRICATION;EPITAXY |
| 日期: | 2006 |
| 上傳時間: | 2010-07-06 18:19:41 (UTC+8) |
| 出版者: | 中央大學 |
| 摘要: | In this paper, we report a collector-up npn heterojunction bipolar transistor (C-up HBT) which employs a p-type doping buried layer inserted between an extrinsic emitter and a subemitter for current confinement. Fabrication of C-up AlGaAs/GaAs HBTs with a |
| 關聯: | SEMICONDUCTOR SCIENCE AND TECHNOLOGY |
| 顯示於類別: | [電機工程研究所] 期刊論文
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