Catalyst-free growth of indium nitride nanorods by chemical-beam epitaxy

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Title:	Catalyst-free growth of indium nitride nanorods by chemical-beam epitaxy
Authors:	Chao,C. K.;Chyi,J. I.;Hsiao,C. N.;Kei,C. C.;Kuo,S. Y.;Chang,H. -S.;Hsu,T. M.
Contributors:	電機工程研究所
Keywords:	FUNDAMENTAL-BAND GAP;HEXAGONAL INN;NANOWIRES
Date:	2006
Issue Date:	2010-07-06 18:20:07 (UTC+8)
Publisher:	中央大學
Abstract:	We demonstrate the growth of indium nitride (InN) nanorods on sapphire by chemical-beam epitaxy without a catalyst. The nanorods are synthesized nearly unidirectionally along the 001) direction and the diameters varied in the range of 20-40 nm with In/N f
Relation:	APPLIED PHYSICS LETTERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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