Enhancing luminescence efficiency of InAs quantum dots at 1.5 mu m using a carrier blocking layer

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Title:	Enhancing luminescence efficiency of InAs quantum dots at 1.5 mu m using a carrier blocking layer
Authors:	Hsieh,Tung-Po;Chiu,Pei-Chin;Chyi,Jen-Inn;Chang,Hsiang-Szu;Chen,Wen-Yen;Hsu,Tzu Min;Chang,Wen-Hao
Contributors:	電機工程研究所
Keywords:	CHEMICAL-VAPOR-DEPOSITION;OPTICAL-PROPERTIES;LASERS;GAAS;SEPARATION;EMISSION;MATRIX;RANGE
Date:	2006
Issue Date:	2010-07-06 18:20:32 (UTC+8)
Publisher:	中央大學
Abstract:	The authors report an effective way to enhance the optical efficiency of InAs quantum dots (QDs) on GaAs emitting at the wavelength of 1.5 mu m. It is found that the loss of holes from QDs to their proximity via the high indium composition InGaAs overgrow
Relation:	APPLIED PHYSICS LETTERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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