The improvement in modulation speed of GaN-based green light-emitting diode, (LED) by use of n-type barrier, doping for plastic optical fiber (POF) communication

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Title:	The improvement in modulation speed of GaN-based green light-emitting diode, (LED) by use of n-type barrier, doping for plastic optical fiber (POF) communication
Authors:	Shi,J. -W.;Huang,H. -Y;Sheu,J. -K.;Chen,C. -H.;Wu,Y. -S.;Lai,W. -C.
Contributors:	電機工程研究所
Keywords:	QUANTUM-WELL BLUE;TRANSMISSION
Date:	2006
Issue Date:	2010-07-06 18:21:56 (UTC+8)
Publisher:	中央大學
Abstract:	We demonstrate a high-speed GaN-based light-emitting diode at a wavelength of around 500 nm for the application to plastic optical fiber communication. By use of the n-type doping in the GaN barrier layers of the InxGa1-xN-GaN-based multiple-quantum-well
Relation:	IEEE PHOTONICS TECHNOLOGY LETTERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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