Voltage-tunable SiO2-isolated a-SiC : H and/or a-SiN : H p-i-n thin-film LEDs fabricated on c-Si

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Title:	Voltage-tunable SiO2-isolated a-SiC : H and/or a-SiN : H p-i-n thin-film LEDs fabricated on c-Si
Authors:	Yeh,Rong-Hwei;Liu,Wen-Hsiung;Lo,Shih-Yung;Hong,Jyh-Wong
Contributors:	電機工程研究所
Keywords:	LIGHT-EMITTING DIODE;ELECTROLUMINESCENCE;PHOTOLUMINESCENCE;LAYERS;SIO2-FILMS
Date:	2006
Issue Date:	2010-07-06 18:22:04 (UTC+8)
Publisher:	中央大學
Abstract:	A voltage-tunable amorphous p-i-n thin-film light emitting diodes (TFLEDs) with SiO2-isolation on n(+)-type crystalline silicon (c-Si) has been proposed and fabricated successfully. The structure of the device with i-a-SiC:H and i-a-SiN:H luminescent laye
Relation:	SOLID-STATE ELECTRONICS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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