A three-dimensional simulation of electrostatic characteristics for carbon nanotube array field effect transistors

NCUIR > College of Electrical Engineering & Computer Science > Graduate Institute of Electrical Engineering > journal & Dissertation > Item 987654321/32260

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32260

Title:	A three-dimensional simulation of electrostatic characteristics for carbon nanotube array field effect transistors
Authors:	Li,YM;Chou,HM;Lee,JW;Lee,BS
Contributors:	電機工程研究所
Keywords:	POISSON EQUATION;FABRICATION
Date:	2005
Issue Date:	2010-07-06 18:22:33 (UTC+8)
Publisher:	中央大學
Abstract:	We, in this paper, study the electrostatic characteristics and the gate capacitances for carbon nanotube (CNT) array field effect transistors (FETs). The explored CNT-array FET is with three configurations of gate electrode, the top gate, the wrap around
Relation:	MICROELECTRONIC ENGINEERING
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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