Efficient spin relaxation in InGaN/GaN and InGaN/GaMnN quantum wells: An obstacle to spin detection

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Title:	Efficient spin relaxation in InGaN/GaN and InGaN/GaMnN quantum wells: An obstacle to spin detection
Authors:	Chen,WM;Buyanova,IA;Nishibayashi,K;Kayanuma,K;Seo,K;Murayama,A;Oka,Y;Thaler,G;Frazier,R;Abernathy,CR;Ren,F;Pearton,SJ;Pan,CC;Chen,GT;Chyi,JI
Contributors:	電機工程研究所
Keywords:	LIGHT-EMITTING-DIODES;DYNAMICS;GAN
Date:	2005
Issue Date:	2010-07-06 18:23:26 (UTC+8)
Publisher:	中央大學
Abstract:	Transient magneto-optical spectroscopy of InGaN/GaN and InGaN/GaMnN quantum wells reveals a spin relaxation process with a characteristic time of 50 ps. We show that the observed spin relaxation is mediated by spin flips of individual carriers rather than
Relation:	APPLIED PHYSICS LETTERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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