Electroreflectance studies of InAs quantum dots with InxGa1-xAs capping layer grown by metalorganic chemical vapor deposition

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Title:	Electroreflectance studies of InAs quantum dots with InxGa1-xAs capping layer grown by metalorganic chemical vapor deposition
Authors:	Chang,WH;Chen,HY;Chang,HS;Chen,WY;Hsu,TM;Hsieh,TP;Chyi,JI;Yeh,NT
Contributors:	電機工程研究所
Keywords:	1.3 MU-M;DEPENDENCE;EMISSION;SHIFT;LASER
Date:	2005
Issue Date:	2010-07-06 18:23:31 (UTC+8)
Publisher:	中央大學
Abstract:	Electroreflectance spectroscopy was used to study the effect of InxGa1-xAs capping layer on InAs quantum dots grown by metaloiganic chemical vapor deposition. The optical transitions of the quantum dots. and the InxGa1-xAs capping layer were well resolved
Relation:	APPLIED PHYSICS LETTERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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