InGaAsN/GaAs quantum-well lasers using two-step and nitride passivation growth

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Title:	InGaAsN/GaAs quantum-well lasers using two-step and nitride passivation growth
Authors:	Chiu,PC;Yeh,NT;Hong,CC;Hsieh,TP;Tsai,YT;Ho,WJ;Chyi,JI
Contributors:	電機工程研究所
Keywords:	CHEMICAL-VAPOR-DEPOSITION;LOW-THRESHOLD;GAINNAS;EPITAXY
Date:	2005
Issue Date:	2010-07-06 18:24:02 (UTC+8)
Publisher:	中央大學
Abstract:	The optical properties of InGaAsN QW grown on AlGaAs/GaAs cladding layers were investigated. Al contamination in the quantum well due to the memory effect is responsible for the degradation of optical quality. We propose a growth method to reduce the Al c
Relation:	APPLIED PHYSICS LETTERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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