Performance enhancement by using the n(+)-GaN cap layer and gate recess technology on the AlGaN/GaN HEMTs fabrication.

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32341

Title:	Performance enhancement by using the n(+)-GaN cap layer and gate recess technology on the AlGaN/GaN HEMTs fabrication.
Authors:	Wang,WK;Lin,PC;Lin,CH;Lin,CK;Chan,YJ;Chen,GT;Chyi,JI
Contributors:	電機工程研究所
Date:	2005
Issue Date:	2010-07-06 18:24:31 (UTC+8)
Publisher:	中央大學
Abstract:	Due to the low mobility and wide bandgap characteristics of the undoped AlGaN layer used in the conventional AlGaN/GaN HEMT as a cap layer, the dc and rf performances of the device will be limited by its disadvantages of high ohmic contact resistance and
Relation:	COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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