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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32343

    Title: Performance enhancement by using the n(+)-GaN cap layer and gate recess technology on the AlGaN-GaNHEMT fabrication
    Authors: Wang,WK;Lin,PC;Lin,CH;Lin,CK;Chan,YJ;Chen,GT;Chyi,JI
    Contributors: 電機工程研究所
    Keywords: HEMTS
    Date: 2005
    Issue Date: 2010-07-06 18:24:33 (UTC+8)
    Publisher: 中央大學
    Abstract: Due to the low mobility and wide bandgap characteristics of the undoped AlGaN layer used in the conventional AlGaN-GaN HEMT as a cap layer, the RF performance of this device will be limited by its high contact resistance and high knee voltage. In this let
    Appears in Collections:[電機工程研究所] 期刊論文

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