Temperature stability of dynamic-threshold mode SiGe p-metal-oxide-semiconductor field effect transistors

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Title:	Temperature stability of dynamic-threshold mode SiGe p-metal-oxide-semiconductor field effect transistors
Authors:	Liao,WM;Li,PW
Contributors:	電機工程研究所
Date:	2005
Issue Date:	2010-07-06 18:25:02 (UTC+8)
Publisher:	中央大學
Abstract:	In this study, we have systematically investigated the thermal stability of strained silicon-germanium (SiGe) and bulk Si p-metal-oxide-semiconductor field-effect transistors (MOSFETs) in dynamic-threshold (DT) mode and standard mode operation, respective
Relation:	JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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