InGaN-GaN MQW LEDs with current blocking layer formed by selective activation.

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32408

Title:	InGaN-GaN MQW LEDs with current blocking layer formed by selective activation.
Authors:	Lee,CM;Chuo,CC;Liu,YC;Chen,IL;Chyi,JI
Contributors:	電機工程研究所
Keywords:	BUFFER LAYER;GROWTH
Date:	2004
Issue Date:	2010-07-06 18:26:47 (UTC+8)
Publisher:	中央大學
Abstract:	Selective activation technique was used to define a semi-insulating current-blocking layer underneath the p-pad of InGaN-GaN multiple-quantum-well light-emitting diodes (LEDs). The output power of the LEDs at 20 mA was increased 10% because less current w
Relation:	IEEE ELECTRON DEVICE LETTERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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