Nonlinear behaviors of low-temperature-grown GaAs-based photodetectors around 1.3 mu m telecommunication wavelength

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32419

Title:	Nonlinear behaviors of low-temperature-grown GaAs-based photodetectors around 1.3 mu m telecommunication wavelength
Authors:	Shi,JW;Chen,YH;Gan,KG;Chiu,YJ;Bowers,JE;Tien,MC;Liu,TM;Sun,CK
Contributors:	電機工程研究所
Keywords:	TRAVELING-WAVE-PHOTODETECTORS;POWER-BANDWIDTH-PRODUCT;CARRIER DYNAMICS;HIGH-SPEED;PERFORMANCES;1.55-MU-M
Date:	2004
Issue Date:	2010-07-06 18:27:11 (UTC+8)
Publisher:	中央大學
Abstract:	We observed distinct bandwidth degradation behaviors in low-temperature-grown GaAs (LTG-GaAs)-based traveling-wave photodetectors (PDs) under similar to1300-nm telecommunication wavelength operation. Compared with the bandwidth degradation behaviors of di
Relation:	IEEE PHOTONICS TECHNOLOGY LETTERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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