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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32450

    Title: 0.2-mu m gate-length InGaP-InGaAs DCFETs for C-band MMIC amplifier applications
    Authors: Chiu,HC;Yang,SC;Lin,CK;Hwu,MJ;Chan,YJ
    Contributors: 電機工程研究所
    Keywords: MODEL
    Date: 2003
    Issue Date: 2010-07-06 18:28:15 (UTC+8)
    Publisher: 中央大學
    Abstract: A C-band In0.49Ga0.51P-In0.15Ga0.85As doped-channel FET (DCFET) monolithic power amplifier was designed and fabricated using low-k benzocyclobutene (BCB) interlayer technology. With a photosensitive low-k BCB interlayer (epsilon = 2.7), not only can the c
    Appears in Collections:[電機工程研究所] 期刊論文

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