Effect of external strain on the conductivity of AlGaN/GaN high-electron-mobility transistors

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Title:	Effect of external strain on the conductivity of AlGaN/GaN high-electron-mobility transistors
Authors:	Kang,BS;Kim,S;Kim,J;Ren,F;Baik,K;Pearton,SJ;Gila,BP;Abernathy,CR;Pan,CC;Chen,GT;Chyi,JI;Chandrasekaran,V;Sheplak,M;Nishida,T;Chu,SNG
Contributors:	電機工程研究所
Keywords:	PIEZOELECTRIC POLARIZATION;HETEROSTRUCTURES;PERFORMANCE;DEFECTS;DEVICES;HEMTS;GAN
Date:	2003
Issue Date:	2010-07-06 18:29:03 (UTC+8)
Publisher:	中央大學
Abstract:	The changes in the conductance of the channel of Al0.3Ga0.7N/GaN high-electron-mobility transistor structures during the application of both tensile and compressive strain were measured. For a fixed Al mole fraction, the changes in the conductance were ro
Relation:	APPLIED PHYSICS LETTERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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