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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32484


    Title: High performance BCB-bridged AlGaAs/InGaAs power HFETs
    Authors: Chiu,HC;Yeh,TJ;Yang,SC;Hwu,MJ;Chan,YJ
    Contributors: 電機工程研究所
    Keywords: GATE LEAKAGE CURRENT;BREAKDOWN WALKOUT;HEMTS
    Date: 2003
    Issue Date: 2010-07-06 18:29:22 (UTC+8)
    Publisher: 中央大學
    Abstract: A novel low-k benzocyclobutene (BCB) bridged and passivated layer for AlGaAs/InGaAs doped-channel power field effect transistors (FETs) with high reliability and linearity has been developed and characterized. In this study, we applied a low-k BCB-bridged
    Relation: IEEE TRANSACTIONS ON ELECTRON DEVICES
    Appears in Collections:[電機工程研究所] 期刊論文

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