Mechanisms for photon-emission enhancement with silicon doping in InGaN/GaN quantum-well structures

NCUIR > College of Electrical Engineering & Computer Science > Graduate Institute of Electrical Engineering > journal & Dissertation > Item 987654321/32495

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题名:	Mechanisms for photon-emission enhancement with silicon doping in InGaN/GaN quantum-well structures
作者:	Cheng,YC;Tseng,CH;Hsu,C;Ma,KJ;Feng,SW;Lin,EC;Yang,CC;Chyi,JI
贡献者:	電機工程研究所
关键词:	OPTICAL-PROPERTIES;MULTIQUANTUM WELLS;SI;GAN;BARRIERS;LUMINESCENCE;DEPENDENCE;TRANSPORT
日期:	2003
上传时间:	2010-07-06 18:29:44 (UTC+8)
出版者:	中央大學
摘要:	Material and optical analyses of three InGaN/GaN quantum-well (QW) samples with different silicon-doping conditions were conducted. Quantum-dot (QD) structures were observed in samples of silicon doping either in barriers or wells. The calibrated-radiativ
關聯:	JOURNAL OF ELECTRONIC MATERIALS
显示于类别:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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