Reducing dark current in a high-speed Si-based interdigitated trench-electrode MSM photodetector

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Title:	Reducing dark current in a high-speed Si-based interdigitated trench-electrode MSM photodetector
Authors:	Lin,CS;Chang,YC;Yeh,RH;Hong,JW
Contributors:	電機工程研究所
Keywords:	CRYSTALLINE SILICON HETEROJUNCTIONS;SEMICONDUCTOR-METAL PHOTODETECTORS;TEMPERATURE;WAFER
Date:	2003
Issue Date:	2010-07-06 18:29:52 (UTC+8)
Publisher:	中央大學
Abstract:	The authors have studied higher dark-current temperature dependence in a trench-electrode Si-based metal-semiconductor-metal (MSM) photodetector which has a hydrogenated intrinsic amorphous silicon (i-a-Si:H) dark-current suppression layer. The poor dark-
Relation:	IEEE TRANSACTIONS ON ELECTRON DEVICES
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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