Scaleable large-signal model of 0.18 mu m CMOS process for rf power predictions

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32501

Title:	Scaleable large-signal model of 0.18 mu m CMOS process for rf power predictions
Authors:	Kuo,CW;Hsiao,CC;Ho,CC;Chan,YJ
Contributors:	電機工程研究所
Keywords:	CIRCUIT-DESIGN;MOS
Date:	2003
Issue Date:	2010-07-06 18:29:56 (UTC+8)
Publisher:	中央大學
Abstract:	The design of the radio frequency integrated circuits by CMOS technologies requires an accurate and scaleable model, which can be valid in the GHz range for device non-linear behavior predictions [IEEE Trans Solid State Circuits 35 (2000) 186; IEEE J. Sol
Relation:	SOLID-STATE ELECTRONICS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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