Surface band-bending effects on the optical properties of indium gallium nitride multiple quantum wells

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32504

Title:	Surface band-bending effects on the optical properties of indium gallium nitride multiple quantum wells
Authors:	Peng,LH;Shih,CW;Lai,CM;Chuo,CC;Chyi,JI
Contributors:	電機工程研究所
Keywords:	LIGHT-EMITTING-DIODES;FIELD-EFFECT TRANSISTORS;INGAN SINGLE;LASER-DIODES;POLARIZATION;EMISSION;BLUE;SEMICONDUCTORS;ALGAN/GAN;DEVICES
Date:	2003
Issue Date:	2010-07-06 18:30:02 (UTC+8)
Publisher:	中央大學
Abstract:	We report the use of selective wavelength excitation to examine the surface band-bending effects on the optical properties of 3.0-nm-thick indium gallium nitride (InGaN) multiple quantum wells (MQWs). Under a 355-nm excitation, the In0.18Ga0.82N well emis
Relation:	APPLIED PHYSICS LETTERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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