X-ray scattering studies on InGaAs quantum dots

NCUIR > College of Electrical Engineering & Computer Science > Graduate Institute of Electrical Engineering > journal & Dissertation > Item 987654321/32510

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32510

Title:	X-ray scattering studies on InGaAs quantum dots
Authors:	Hsu,CH;Lee,HY;Hsieh,YW;Stetsko,YP;Tang,MT;Liang,KS;Yeh,NT;Chyi,JI;Noh,DY
Contributors:	電機工程研究所
Keywords:	STRAIN
Date:	2003
Issue Date:	2010-07-06 18:30:15 (UTC+8)
Publisher:	中央大學
Abstract:	We present a structural investigation of self-assembled InGaAs quantum dots on GaAS(0 0 1) substrates grown by molecular-beam epitaxy. The grazing incidence X-ray scattering measurements were performed at BL17B of Taiwan Light Source and BL12B2 of SPring-
Relation:	PHYSICA B-CONDENSED MATTER
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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