Design of high speed Si/SiGe heterojunction complementary metal-oxide-semiconductor field effect transistors with reduced short-channel effects

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Title:	Design of high speed Si/SiGe heterojunction complementary metal-oxide-semiconductor field effect transistors with reduced short-channel effects
Authors:	Li,PW;Liao,WM
Contributors:	電機工程研究所
Keywords:	HOLE MOBILITY;HETEROSTRUCTURES;MOSFETS;ALLOYS
Date:	2002
Issue Date:	2010-07-06 18:31:10 (UTC+8)
Publisher:	中央大學
Abstract:	By taking advantages of higher carrier mobility and bandgap engineering in the Si/SiGe system, we explore the channel and source/drain (S/D) designs for Si/SiGe heterojunction complementary metal-oxide-semiconductor field effect transistors (CMOSFETs). A
Relation:	JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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