High power density and large voltage swing of enhancement-mode Al0.5Ga0.5As/InGaAs pseudomorphic high electron mobility transistor for 3.5V L-band applications

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Title:	High power density and large voltage swing of enhancement-mode Al0.5Ga0.5As/InGaAs pseudomorphic high electron mobility transistor for 3.5V L-band applications
Authors:	Chiu,HC;Yang,SC;Chan,YJ
Contributors:	電機工程研究所
Keywords:	HEMT
Date:	2002
Issue Date:	2010-07-06 18:31:20 (UTC+8)
Publisher:	中央大學
Abstract:	A high power density and a large voltage swing of Al0.5Ga0.5As/InGaAs enhancement-mode pseudomorphic high electron mobility transistor (pHEMTs) operated under V-ds = 3.5 V for L-band application have been achieved using a high-uniformity and high-selectiv
Relation:	JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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