SiO2-isolated Si-based n-a(amorphous)-Si:H/i-a-SiC:H/p-a-Si:H thin-film LEDs (TFLEDs) with n-a-Si/n-type crystalline silicon (c-Si) hetero-interface have been proposed and fabricated successfully on an n/n(+) c-Si wafer. The obtained TFLEDs revealed a bri
