(AlxGa1-x)(0.5)In0.5P/In0.15Ga0.85As (x = 0, 0.3, 1.0) heterostructure doped-channel FETs for microwave power applications

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32570

Title:	(AlxGa1-x)(0.5)In0.5P/In0.15Ga0.85As (x = 0, 0.3, 1.0) heterostructure doped-channel FETs for microwave power applications
Authors:	Yang,SC;Chiu,HC;Chan,YJ;Lin,HH;Kuo,JM
Contributors:	電機工程研究所
Keywords:	MOLECULAR-BEAM EPITAXY;INTERFACE;ALXGA1-XAS
Date:	2001
Issue Date:	2010-07-06 18:32:29 (UTC+8)
Publisher:	中央大學
Abstract:	The quaternary (AlxGa1-x)(0.5)In0.5P(0 less than or equal to x less than or equal to 1) compounds on GaAs substrates are important materials used as a Schottky layer in microwave devices. In this report, we systematically investigated the electrical prope
Relation:	IEEE TRANSACTIONS ON ELECTRON DEVICES
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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