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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32580

    Title: AlGaAs/InGaAs heterostructure doped-channel FET's exhibiting good electrical performance at high temperatures
    Authors: Chiu,HC;Yang,SC;Chan,YJ
    Contributors: 電機工程研究所
    Keywords: GAAS-MESFETS
    Date: 2001
    Issue Date: 2010-07-06 18:32:50 (UTC+8)
    Publisher: 中央大學
    Abstract: High-power and high-efficiency GaAs heterostructure field-effect transistors (FETs) are attracting tremendous attention in RF power amplifier applications. However, thermal effects can be an important issue in RF power devices, owing to the huge amount of
    Appears in Collections:[電機工程研究所] 期刊論文

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