Improved electroluminescence of InAs quantum dots with strain reducing layer

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32610

Title:	Improved electroluminescence of InAs quantum dots with strain reducing layer
Authors:	Yeh,NT;Nee,TE;Chyi,JI;Chia,CT;Hsu,TM;Huang,CC
Contributors:	電機工程研究所
Keywords:	1.3 MU-M;CHEMICAL-VAPOR-DEPOSITION;LASER;GAAS
Date:	2001
Issue Date:	2010-07-06 18:33:56 (UTC+8)
Publisher:	中央大學
Abstract:	The effects of the arrangement between InAs quantum dots and InGaAs strain-reducing layer (SRL) on the optical properties of quantum dot light emitting diodes are investigated. Electroluminescence wavelength longer than 1.3 mum is obtained as InAs quantum
Relation:	JOURNAL OF CRYSTAL GROWTH
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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