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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32630


    Title: RIE gate-recessed (Al0.3Ga0.7)(0.5)In0.5P/InGaAs double doped-channel FETs using CHF3+BCl3 mixing plasma
    Authors: Yang,SC;Chiu,HC;Chien,FT;Chan,YJ;Kuo,JM
    Contributors: 電機工程研究所
    Keywords: DESIGN;HEMTS
    Date: 2001
    Issue Date: 2010-07-06 18:34:39 (UTC+8)
    Publisher: 中央大學
    Abstract: BCl3+ CHF3 gas mixture for reactive ion etching process was used to the gate-recess of fabricating (Al0.3Ga0.7)(0.5)In0.5P quaternary heterostructure double doped-channel FET's (D-DCFET), where a high uniformity of V-th was achieved. With the merits of th
    Relation: IEEE ELECTRON DEVICE LETTERS
    Appears in Collections:[電機工程研究所] 期刊論文

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