Experimental I-V characteristics of AlGaAs/GaAs and GaInP/GaAs (D)HBTs with thin bases

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Title:	Experimental I-V characteristics of AlGaAs/GaAs and GaInP/GaAs (D)HBTs with thin bases
Authors:	Hsin,YM;Asbeck,PM
Contributors:	電機工程研究所
Keywords:	HETEROJUNCTION BIPOLAR-TRANSISTORS;CURRENT GAIN
Date:	2000
Issue Date:	2010-07-06 18:35:33 (UTC+8)
Publisher:	中央大學
Abstract:	N-p-n AlGaAs/GaAs and GaInP/GaAs (double) heterojunction bipolar transistors with thin base widths down to 200 Angstrom have been fabricated, and their collector and base current-voltage characteristics have been studied. The experimental results show tha
Relation:	SOLID-STATE ELECTRONICS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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