Forward turn-on and reverse blocking characteristics of GaN Schottky and p-i-n rectifiers

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Title:	Forward turn-on and reverse blocking characteristics of GaN Schottky and p-i-n rectifiers
Authors:	Zhang,AP;Dang,G;Ren,F;Han,J;Cho,H;Pearton,SJ;Chyi,JI;Nee,TE;Lee,CM;Chuo,CC;Chu,SNG
Contributors:	電機工程研究所
Keywords:	DEVICES
Date:	2000
Issue Date:	2010-07-06 18:35:35 (UTC+8)
Publisher:	中央大學
Abstract:	High voltage GaN Schottky and p-i-n rectifiers have been fabricated on heteroepitaxial layers. The Schottky diodes have reverse blocking voltages around 500 V for vertical devices employing undoped, conducting GaN, whereas these voltages are >3000 V for l
Relation:	SOLID-STATE ELECTRONICS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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