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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32658

    Title: High Schottky barrier Al0.5In0.5P/InGaAs doped-channel HFETs with superior microwave power performance
    Authors: Chiu,HC;Yang,SC;Chan,YJ;Kuo,JM
    Contributors: 電機工程研究所
    Date: 2000
    Issue Date: 2010-07-06 18:35:39 (UTC+8)
    Publisher: 中央大學
    Abstract: Al0.5In0.5P/In0.15Ga0.85As doped-channel HFETs (DCFETs) are expected to have a high linearity and a high breakdown voltage for microwave power device applications due to the improvement of a larger DeltaE(c) (0.45eV) and a wide bandgap AIInP Schottky laye
    Appears in Collections:[電機工程研究所] 期刊論文

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