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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32669

    Title: Molecular beam epitaxy regrowth and device performance of GaAs-based pseudomorphic high electron mobility transistors using a thin indium passivation layer
    Authors: Chen,SS;Lin,CC;Peng,CK;Chan,YJ
    Contributors: 電機工程研究所
    Keywords: MBE
    Date: 2000
    Issue Date: 2010-07-06 18:36:03 (UTC+8)
    Publisher: 中央大學
    Abstract: Using the technique of molecular beam epitaxy, an indium passivation layer as thin as several tens of Angstrom was implemented to protect underlying III-V epilayers from carbon and oxygen contamination. After the subsequent desorption of the passivation l
    Appears in Collections:[電機工程研究所] 期刊論文

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