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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32681


    Title: Reactive-ion-etching (AlxGa1-x)(0.5)In0.5P quaternary compounds using chlorine and fluorine mixing plasma
    Authors: Yang,SC;Chan,YJ;Chang,KH;Lin,KC
    Contributors: 電機工程研究所
    Date: 2000
    Issue Date: 2010-07-06 18:36:28 (UTC+8)
    Publisher: 中央大學
    Abstract: Both BCl3+CHF3 and BCl3+CF4 reactive ion etching processes were used to study the etching characteristics of (AlxGa1-x)(0.5)In0.5P quaternary compounds with various Al contents (x=0, 0.3, 0.7, 1). By increasing the fluorine-based gas (CHF3 or CF4) into th
    Relation: COMPOUND SEMICONDUCTORS 1999
    Appears in Collections:[電機工程研究所] 期刊論文

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