Self-assembled In0.5Ga0.5As quantum-dot lasers with doped active region

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32685

Title:	Self-assembled In0.5Ga0.5As quantum-dot lasers with doped active region
Authors:	Yeh,NT;Lee,JM;Nee,TE;Chyi,JI
Contributors:	電機工程研究所
Keywords:	CHEMICAL-VAPOR-DEPOSITION;ROOM-TEMPERATURE;PHOTOLUMINESCENCE;INJECTION;EMISSION;INGAAS;THRESHOLD;MATRIX;NM
Date:	2000
Issue Date:	2010-07-06 18:36:36 (UTC+8)
Publisher:	中央大學
Abstract:	Self-assembled In0.5Ga0.5As quantum-dot lasers with different doping schemes in the active region are investigated, Their lasing wavelength, characteristic temperature, quantum efficiency, and internal loss are characterized and correlated with the size,
Relation:	IEEE PHOTONICS TECHNOLOGY LETTERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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