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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32696

    Title: Unusual behavior of the electrical properties of GaN p-i-n rectifiers caused by the presence of deep centers and by migration of shallow donors
    Authors: Polyakov,AY;Smirnov,NB;Govorkov,AV;Zhang,AP;Ren,F;Pearton,SJ;Chyi,JI;Nee,TE;Chuo,CC;Lee,CM
    Contributors: 電機工程研究所
    Keywords: FILMS;BAND
    Date: 2000
    Issue Date: 2010-07-06 18:37:01 (UTC+8)
    Publisher: 中央大學
    Abstract: Instabilities encountered during thermal cycling of GaN p-i-n rectifiers hale been traced to filling of deep traps in the depletion region and to field-induced migration of shallow donors. Since the rectifiers are intended for high temperature operation (
    Appears in Collections:[電機工程研究所] 期刊論文

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